SAMSUNG PM9B1 256GB GEN4 3300/1250MBPS NVME 2280

Capacity: 256 GB Variants: 256 GB Overprovisioning: 17.6 GB / 7.4 % Production: Unknown Released: 2022 Part Number: MZVL4256HBJD-00B07 Market: Consumer Physical Form Factor: M.2 2280 (Single-Sided) Interface: PCIe 4.0 x4 Protocol: NVMe 1.4 Power Draw: Unknown Controller Manufacturer: Marvell Name: 88SS1322 Whistler Plus Architecture: Arm® Cortex®-R5 Core Count: Triple-Core Foundry: TSMC FinFET Process: 12 nm Flash Channels: 4 @ 1,200 MT/s Chip Enables: 4 Controller Features: HMB (enabled) NAND Flash Manufacturer: Samsung Name: V-NAND V6 Part Number: K9CMGY8J5B-CCK0 Type: TLC Technology: 128-layer Speed: 1200 MT/s Capacity: 1 chip @ 2 Tbit Toggle: 4.0 Topology: Charge Trap Process: 19 nm Die Size: 102 mm² (5.0 Gbit/mm²) Dies per Chip: 4 dies @ 512 Gbit Planes per Die: 2 Decks per Die: 1 Word Lines: 136 per NAND String 94.1% Vertical Efficiency Read Time (tR): 45 µs Program Time (tProg): 390 µs Block Erase Time (tBERS): 3.5 ms Die Read Speed: 711 MB/s Die Write Speed: 82 MB/s Endurance: (up to) 3000 P/E Cycles Page Size: 16 KB DRAM Cache Type: None Host-Memory-Buffer (HMB): 64 MB Performance Sequential Read: 3,300 MB/s Sequential Write: 1,250 MB/s Random Read: 240,000 IOPS Random Write: 400,000 IOPS Endurance: Unknown Warranty: Unknown SLC Write Cache: approx. 22 GB (dynamic only) Speed when Cache Exhausted: approx. 250 MB/s